4.4 Article Proceedings Paper

Growth, structure and annealing behaviour of epitaxial ZrO2 films on Pt(111)

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SURFACE SCIENCE
卷 532, 期 -, 页码 420-424

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ELSEVIER
DOI: 10.1016/S0039-6028(03)00187-0

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zirconium; scanning tunneling microscopy; surface structure; morphology; roughness, and topography; growth; epitaxy; low energy electron diffraction (LEED)

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For future investigations of catalytic reactions on sulfated ZrO2 surfaces by means of scanning tunneling microscopy (STM), ZrO2 films are prepared on Pt(111) and characterized by STM and low-energy electron diffraction (LEED). The films are prepared by vapor deposition of Zr in an O-2 atmosphere followed by annealing (also in an O-2 atmosphere). Conditions are searched where well-ordered, continuous and smooth ZrO2 films are formed. Depositing the films according to literature data at room temperature [Surf. Sci. 237 (1990) 166] yields films with, hillock morphology which decay during annealing and loose continuity. The desired film perfection is attained, however, if the films are deposited at 470 K and postannealed at 950 K. Continuous films are obtained displaying large terraces and a clear p(1 x 1) ZrO2(111) LEED pattern. A splitting of the LEED spots reveals that the films are slightly rotated with respect to Pt(111). However, annealing the films at temperatures >1000 K again yields discontinuous films which indicates the metastable character of the ZrO2 films on Pt(111) substrate. (C) 2003 Elsevier Science B.V. All rights reserved.

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