期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
卷 42, 期 6B, 页码 L637-L639出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.42.L637
关键词
4H-SiC; carbon-face; epitaxial growth; morphology; site-competition; doping
High-quality 4H-SiC Carbon-face (C-face) epitaxial layers have been grown by a low-pressure, horizontal hot-wall type chemical vapor deposition system. A specular surface morphology was obtained at a substrate temperature of about 1600 degreesC and a C/Si ratio of 1.5 or less. The site-competition behavior is observed in the doping process of C-face epitaxial growth at a low pressure of 250 mbar and C/Si ratios between 0.6 and 3. The lowest residual donor concentration of 7 x 10(14) cm(-3) is obtained at a C/Si ratio of 3. The optimal conditions for growing a C-face epitaxial layer having both a good surface morphology and reduced residual impurity concentration are discussed.
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