Anisotropic magnetoresistance in lightly doped La2-xSrxCuO4:: Impact of antiphase domain boundaries on the electron transport -: art. no. 247003

Detailed behavior of the magnetoresistance (MR) is studied in lightly doped antiferromagnetic La1.99Sr0.01CuO4, where, thanks to the weak-ferromagnetic moment due to spin canting, the antiferromagnetic (AF) domain structure can be manipulated by the magnetic field. The MR behavior demonstrates that CuO2 planes indeed contain antiphase AF-domain boundaries in which charges are confined, forming antiphase stripes. The data suggest that a high magnetic field turns the antiphase stripes into in-phase stripes, and the latter appear to give better conduction than the former, which challenges the notion that the antiphase character of stripes facilitates charge motion.