Fabrication and characterization of C60 thin-film transistors with high field-effect mobility

We report an improvement in performance of C-60 thin-film field-effect transistors (TFTs) fabricated by molecular-beam deposition. Devices, fabricated and characterized under a high vacuum without exposure to air, routinely showed current on/off ratios >10(8) and field-effect mobilities in the range of 0.5-0.3 cm(2)/Vs. The mobility obtained is close to that derived from the photocurrent measurements on C-60 thin films and comparable to a very high value among n-type organic TFTs. (C) 2003 American Institute of Physics.