期刊
APPLIED PHYSICS LETTERS
卷 82, 期 25, 页码 4489-4491出版社
AMER INST PHYSICS
DOI: 10.1063/1.1586458
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The characteristic interaction distance between Er3+ ions and carriers that excite them in Er-doped a-Si/SiO2 superlattices is investigated. Superlattice thin films consisting of 12 periods of a-Si/SiO2:Er/SiO2/SiO2:Er layers were deposited by ion sputtering and subsequent annealing at 950 degreesC. The dependence of the Er3+ photoluminescence intensity on the thickness of the Er-doped SiO2 layers is well-described by an exponentially decreasing Er-carrier interaction with a characteristic interaction distance of 0.5+/-0.1 nm. (C) 2003 American Institute of Physics.
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