Structural and electrical characteristics of Ge nanoclusters embedded in Al2O3 gate dielectric

Structural and electrical characteristics of the metal-insulator-semiconductor (MIS) structures of Al/Al2O3/Si containing Ge nanoclusters are experimentally demonstrated. Secondary ion mass spectroscopy results indicate the out-diffusion of Ge after annealing at 800 degreesC in N-2 ambient for 30 min. An increment of leakage current is observed due to the out-diffusion of Ge. Capacitance-voltage studies indicate that annealing can effectively passivate the negatively charged trapping centers. Memory effect of the Ge nanoclusters is verified by the hysteresis in the C-V curves in the annealed sample. (C) 2003 American Institute of Physics.