期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 621, 期 -, 页码 26-29出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2014.09.196
关键词
Ferroelectrics; Single crystal; Dielectric response; Phase transition
The effect of Ce doping on the dielectric relaxation in Sr0.75Ba0.25Nb2O6 single crystal grown by double crucible Stepanov technique has been investigated. It has been observed that the incorporation of Ce ion in the lattice reduces the dielectric maxima. It further increases the degree of diffusiveness and lowers the temperature of dielectric maxima as a result of the introduction of additional random field via created point defects. Both the undoped and Ce doped crystals undergo a non-debye type relaxation. VogelFulcher fitting reveals that the attempt frequency reduced by one order of magnitude on Ce doping. (C) 2014 Elsevier B.V. All rights reserved.
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