Low-loss submicrometer silicon-on-insulator rib waveguides and corner mirrors

Rib microwaveguides are demonstrated on silicon-on-insulator substrates with Si film thickness of either 380 or 200 nm and a width of 1 mum. Corner mirrors that allow compact 90degrees turns between two perpendicular waveguides are characterized. Measured propagation losses are similar to0.4 dB/cm and similar to0.5 dB/cm for 380-nm and 200-nm Si film, respectively, and mirror losses are similar to1 dB. This allows the development of applications such as optical interconnects in integrated circuits over propagation distances larger than several centimeters. (C) 2003 Optical Society of America.