Defect chemistry and semiconducting properties of titanium dioxide: III. Mobility of electronic charge carriers

The present work performs quantitative analysis of the electrical conductivity data reported in the literature in terms of defect chemistry models. The analysis results in the determination of the mobility terms for electrons and electron holes leading to the following respective forms: mu(n) = 0.106 (cm(2)V(-1)s(-1)) mu(p) = (1.05 +/- 0.89) 10(6)/T exp[-0.853 +/- 0.073(eV)/kT] The mobility data determined in this work were then used for verification of defect chemistry disorder models and a good agreement was revealed. (C) 2003 Elsevier Science Ltd. All rights reserved.