期刊
IEEE ELECTRON DEVICE LETTERS
卷 24, 期 7, 页码 424-426出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2003.814020
关键词
HEMTs; liquid crystal; temperature measurement; thermal measurement; thermal simulation
In this letter, we present our thermal study results of GaN-based heterojunction field effect transistors (HFETs). In thermal computation, PAMICE code was used to calculate temperatures in a three-dimension, (3-D) model. In the rmal measurement, nematic liquid crystal thermography was employed to determine the peak temperature on the surface of. the device chip. The calculated and directly measured temperatures agree well. These methods are valuable in predicting the thermal performance of GaN-based HFET devices, in particular the power devices.
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