4.6 Article

High-mobility thin-film transistors based on aligned carbon nanotubes

期刊

APPLIED PHYSICS LETTERS
卷 83, 期 1, 页码 150-152

出版社

AMER INST PHYSICS
DOI: 10.1063/1.1589181

关键词

-

向作者/读者索取更多资源

Thin-film transistors based on aligned carbon nanotubes (CNTs) were fabricated by directly growing highly ordered CNTs on silicon dioxide surface. The transistor shows a pronounced field effect. Electric transport through the aligned carbon nanotubes is dominated by the holes at room temperature. A hole mobility (mu(p)) of the CNT thin-film transistor was estimated to be as high as 61.6 cm(2)/V s. Such a mobility is comparable to that of heavily doped n-Si and is larger than individual CNT field-effect transistor. Thus, it reveals a potential application of the aligned CNTs in electronics. (C) 2003 American Institute of Physics.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据