Properties of arsenic-doped p-type ZnO grown by hybrid beam deposition

As-doped ZnO (ZnO:As) films have been characterized. ZnO:As films show p-type characteristics determined by Hall-effect and photoluminescence (PL) measurements. The hole concentration can be increased up to the mid-10(17)-cm(-3) range. The thermal binding energy of the As acceptor (E-A(th-b)) is 120+/-610 meV, as derived from temperature-dependent Hall-effect measurements. The PL spectra reveal two different acceptor levels (E-A(opt-b)), located at 115 and 164 meV, respectively, above the maximum of the ZnO valence band, and also show the binding energy of the exciton to the As-acceptor (E-AX(b)) is about 12 meV. The values of the ratio E-AX(b)/(E-A(th-b) or E-A(opt-b)) are located in the range from 0.07 to 0.11. (C) 2003 American Institute of Physics.