期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
卷 42, 期 7B, 页码 L818-L820出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.42.L818
关键词
a-plane GaN; r-plane sapphire; SALE; fully coalesced film; non-polar
We report a new epitaxy procedure for growing extremely low defect density a-plane GaN films over r-plane sapphire. By combining selective area growth through a SiO2 mask opening to produce high height to. width aspect ratio a-plane GaN pillars and lateral epitaxy from their c-plane facets, we obtained fully coalesced a-plane GaN films. The excellent structural, optical and electrical characteristics of these selective area lateral epitaxy (SALE) deposited films make them ideal for high efficiency III-N electronic and optoelectronic devices.
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