Effect of C/Si ratio on spiral growth on 6H-SiC (0001)

Spiral growth by chemical vapor deposition (CVD). on 6H-SiC (0001) has been investigated by atomic force microscopy (AFM). The carbon-to-silicon (C/Si) ratio for CVD strongly affects the shape of spiral hillocks. The change in shape originates from the change in the relative rates of spiral growth and step-flow growth: a high C/Si ratio enhances spiral growth, while a low C/Si ratio enhances step-flow growth.