Application of femtosecond laser ablation time-of-flight mass spectrometry to in-depth multilayer analysis

A femtosecond laser system was used in combination with a time-of-flight mass spectrometer (TOF-MS) for in-depth profiling of semiconductor and metal samples. The semiconductor sample was a Co-implanted (10(17)ions/cm(3)) silicon wafer that had been carefully characterized by other established techniques. The total depth of the shallow implanted layer was 150 nm. As a second sample, a thin film metal standard had been used (NIST 2135c). This standard consisted of a silicon wafer with nine alternating Cr and Ni layers, each having a thickness of 56 and 57 nm, respectively. An orthogonal TOF-MS setup was implemented. Ibis configuration was optimized until a sufficient mass resolution of 300 (m/Deltam) and sensitivity was achieved. The experiments revealed that femtosecond-laser ablation TOF-MS is capable of resolving the depth profiles of these demanding samples. The poor precision of the measurements is discussed, and it is shown that this is due to pulse-to-pulse stability of the current laser system. Femtosecond-laser ablation TOF-MS is shown to be a promising technique for rapid in-depth profiling with a good lateral resolution of various multilayer thin film samples.