Influence of sputtering mechanisms on the preferred orientation of aluminum nitride thin films

This article presents a study of the influence of the sputtering parameters on the preferred orientation of polycrystalline aluminum nitride thin films. Aluminum nitride films were grown by rf reactive sputtering of an aluminum target in an N(2)/Ar gas mixture for different values of the deposition parameters: total pressure, nitrogen content in the discharge gas, and substrate bias voltage. The preferred orientation of the films was analyzed by x-ray diffraction. Films with different preferred orientations were obtained, ranging from c-axis oriented films to films with the c axis tilted by up to 61.6degrees from the substrate normal. The different mechanisms influencing the preferred orientation of the films have been considered, especially the transfer of energy to the adatoms on the substrate by particle bombardment. An analysis of the relation between the deposition parameters and the crystal orientation has allowed us to determine the relative importance of the different particles in the supply of energy to the substrate. We have found that Ar ion bombardment of the film during growth is the most influential mechanism on the preferred orientation of the films. As bombardment becomes more energetic, microcrystals in the film tend to grow with the c axis along the surface normal. The energy of Ar bombardment can be best controlled through the substrate bias voltage, a characteristic that we have employed to obtain AlN films exhibiting pure (00.2) preferred orientation and rocking curves with a full width at half maximum as low as 4.2degrees. (C) 2003 American Institute of Physics.