3.8 Article

Tc-enhanced codoping method for GaAs-based dilute magnetic semiconductors

出版社

JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.42.L888

关键词

ab initio calculation; III-V compound semiconductors; transition metal; codoping; dilute magnetic semiconductors; semiconductors spintronics; materials design

向作者/读者索取更多资源

Based on ab initio calculations of Ga1-xMnxNyAs1-y and Ga1-xMnxCyAs1-y, we propose a new codoping method to enhance the Curie temperature T-c of diluted magnetic semiconductors. The solubility of Mn can be increased up to high concentration by the codoping of N or C to reduce the lattice and volume expansion caused by Mn doping. It is found that the impurity band of the majority spin is strongly broadened and pushed up into the higher energy region due to the strong p-d hybridization caused by the codoping, and the T-c becomes higher than the room temperature at x > 6%.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

3.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据