Sulfur-passivation mechanism analysis of GaInAsSb photodetectors

Sulfur passivation of GaInAsSb photodetectors was studied in terms of Auger electron spectroscopy and x-ray photoelectron spectroscopy. The experimental results showed that Sb-S and In-S bonds exist on the sulfur-passivated GaInAsSb surfaces. The reverse dark current of the photodetectors was reduced and the peak detectivity reached 2.83 X 10(10) cm Hz(1/2) W-1 after passivation. (C) 2003 American Institute of Physics.