期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 645, 期 -, 页码 322-327出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2015.05.080
关键词
Zn0.86X0.1Ga0.04O (X: Be, Mg, Ca, Sr) films; Alloying effect of group-II element; RF magnetron sputtering; Raman scattering analysis
资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [2013R1A1A2008793]
- National Research Foundation of Korea [2013R1A1A2008793] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The alloying effects of group-II elements on the properties of the Zn0.86X0.1Ga0.04O (X: Be, Mg, Ca, Sr) films were investigated and compared with each other. Mg alloying into ZnGaO resulted in the best quality of film, whereas Ca or Sr incorporation significantly deteriorated the properties of the resultant films. The lowest resistivity of 1.07 x 10(-3) Omega cm was achieved from the film alloyed with Mg and while, the wide band-gap of 3.76 eV was reached by Be doping in ZnGaO. It was suggested that the film property was strongly dependent on the alloying elements and critically affected by the mismatch of ionic radii between alloying elements and Zn. Additional phonon modes were found in the Raman spectra of Ca and Sr doped films and these phonons were suggested to be due to the local vibration modes related to Ca or Sr doping. (C) 2015 Elsevier B.V. All rights reserved.
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