期刊
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
卷 3, 期 4, 页码 341-346出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2003.209
关键词
nanowire; gold; gold silicide; silicon; silicon oxide; pea-in-the-pod; thermal anneal
Nanoscale wires of silicon oxide, and silicon oxide with embedded gold-silicide nanospheres, are synthesized by heating of a gold-coated silicon wafer at temperatures of 1000 degreesC or above, with the resulting wires having diameters ranging from 30 to 150 nm and lengths of approximately 1 mm. This simple fabrication process should make possible economical bulk production of nanowires. Studies indicate that the growth of these gold-silica composite nanowires occurs directly on the silicon wafer by a solid-liquid-solid mechanism.
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