期刊
CHEMICAL VAPOR DEPOSITION
卷 9, 期 4, 页码 207-212出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/cvde.200306254
关键词
atomic layer deposition; cyclopentadienyl precursor; dielectric properties; zirconium dioxide
ZrO2 thin films have been deposited onto (100) silicon substrates by atomic layer deposition (ALD) using Cp2Zr(CH3)(2) (Cp = cyclopentadienyl) and water as precursors at 200-500 degreesC. Optimal results were obtained at 350 degreesC, with a deposition rate of 0.43 Angstrom (cycle)(-1). Films deposited at 300-400degreesC were polycrystalline, with monoclinic (ill) as the preferred orientation. Carbon and hydrogen impurity levels in the films deposited at 350degreesC were below the detection limit (0.1 at.-%) of time of flight elastic recoil detection analysis (TOF-ERDA). Dielectric properties of the deposited films were also determined. According to the high-resolution transmission electron microscope (HRTEM) analysis, 5 nm thick ZrO2 films were uniform when deposited onto untreated Si(100).
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