ZrO2 thin films grown on silicon substrates by atomic layer deposition with Cp2Zr(CH3)2 and water as precursors

ZrO2 thin films have been deposited onto (100) silicon substrates by atomic layer deposition (ALD) using Cp2Zr(CH3)(2) (Cp = cyclopentadienyl) and water as precursors at 200-500 degreesC. Optimal results were obtained at 350 degreesC, with a deposition rate of 0.43 Angstrom (cycle)(-1). Films deposited at 300-400degreesC were polycrystalline, with monoclinic (ill) as the preferred orientation. Carbon and hydrogen impurity levels in the films deposited at 350degreesC were below the detection limit (0.1 at.-%) of time of flight elastic recoil detection analysis (TOF-ERDA). Dielectric properties of the deposited films were also determined. According to the high-resolution transmission electron microscope (HRTEM) analysis, 5 nm thick ZrO2 films were uniform when deposited onto untreated Si(100).