期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
卷 42, 期 8A, 页码 L885-L887出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.42.L885
关键词
nitride; quantum dot; UV-LED; MOVPE; antisurfactant; compositional fluctuation; electroluminescence; photoluminescence
The fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x similar to 0.1) surface using Si as an antisurfactant. Exposing the AlxGa1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (10(10)-10(11) cm(-2)) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.
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