期刊
JOURNAL OF LIGHTWAVE TECHNOLOGY
卷 21, 期 8, 页码 1820-1827出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2003.815511
关键词
DC drift; electrooptic (EO) effect; PLZT waveguide
The design, characterization, and drift due to electrical bias (DC drift) of thin-film lanthanum-doped lead zirconate titanate (PLZT) waveguide is reported using a Mach-Zehnder modulator. The mechanism of the electrooptic responses based on hysteresis of the applied field is proposed to understand the behavior of the device. It is shown that the thin film exhibits a Kerr effect having a coefficient value of 5 x 10(-18) (m/V)(2). It is reported that by utilizing hydrogen-deficient dry etching, the DC drift is improved by a factor of 3.5. In addition, the verification of the operation of a PLZT-based device for more than 1400 h at 70 degreesC is reported, for the first time.
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