期刊
SOLID STATE COMMUNICATIONS
卷 127, 期 6, 页码 411-414出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1098(03)00457-5
关键词
semiconductors; optical properties; light absorption and reflection
The energy gaps of molecular-beam-epitaxy grown wurtzite-structure In1-xAlxN alloys with x less than or equal to 0.25 have been measured by absorption and photoluminescence experiments. The results are consistent with the recent discovery of a narrow bandgap of similar to0.7 eV for InN. A bowing parameter of 3 eV was determined from the composition dependence of these bandgaps. Combined with previously reported data of InGaN and GaAlN, these results show a universal relationship between the bandgap variations of group-III nitride alloys and their compositions. Published by Elsevier Ltd.
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