期刊
APPLIED PHYSICS LETTERS
卷 83, 期 5, 页码 1005-1007出版社
AMER INST PHYSICS
DOI: 10.1063/1.1595714
关键词
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High-resolution x-ray photoelectron spectroscopy (XPS) at 6 keV photon energy has been realized utilizing high-flux-density x rays from the third generation high-energy synchrotron radiation facility, SPring-8. The method has been applied to analysis of high-k HfO2/interlayer/Si complementary metal-oxide-semiconductor gate-dielectric structures. With the high energy resolution and high throughput of our system, chemical-state differences were observed in the Si 1s, Hf 3d, and O 1s peaks for as-deposited and annealed samples. The results revealed that a SiOxNy interlayer is more effective in controlling the interface structure than SiO2. Our results show the wide applicability of high resolution XPS with hard x rays from a synchrotron source. (C) 2003 American Institute of Physics.
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