期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 622, 期 -, 页码 644-650出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2014.10.003
关键词
P-type oxide semiconductor; Tin oxide; Sol-gel spin coating; Electrical properties; p-n junction
资金
- Ministry of Science and Technology of Taiwan [NSC 99-2221-E-035-034-MY3, NSC 102-2221-E-035-017]
P-type transparent tin oxide (SnO2) based semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin-coating method using gallium (Ga) as acceptor dopant. In this study, we investigated the influence of Ga doping concentration ([Ga]/[Sn] + [Ga] = 0%, 5%, 10%, 15%, and 20%) on the structural, optical and electrical properties of SnO2 thin films. XRD analysis results showed that dried Ga-doped SnO2 (SnO2:Ga) sol-gel films annealed in oxygen ambient at 520 degrees C for 1 h exhibited only the tetragonal rutile phase. The average optical transmittance of as-prepared thin film samples was higher than 87.0% in the visible light region; the optical band gap energy slightly decreased from 3.92 eV to 3.83 eV with increases in Ga doping content. Hall effect measurement showed that the nature of conductivity of SnO2:Ga thin films changed from n-type to p-type when the Ga doping level was 10%, and when it was at 15%, Ga-doped SnO2 thin films exhibited the highest mean hole concentration of 1.70 x 10(18) cm(-3). Furthermore, a transparent p-SnO2:Ga (Ga doping level of 15%)/n-ZnO:Al (Al doping level of 2%) heterojunction was fabricated on alkali-free glass. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 0.65 V. (C) 2014 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据