期刊
出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0168-9002(03)01665-6
关键词
scintillation detection; avalanche photodiode; quantum efficiency; low temperature; carrier freeze-out
We investigate the performance of a large-area (13 mm x 13 mm) avalanche photodiode at temperatures ranging from 4.2 to 77 K. We find that the gain, at a given bias voltage, increases with decreasing temperature down to 40 K, below which a premature breakdown phenomenon occurs. The quantum efficiency of the device decreases with decreasing temperature until approximately 40 K, at which point it drops abruptly to < 15% of its room temperature value. The sensitivity of the device above 40 K makes it a good candidate for detection of scintillation light in low-temperature systems. (C) 2003 Elsevier B.V. All rights reserved.
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