Reflection of guided modes in a semiconductor nanowire laser

We analyze the waveguiding properties of semiconductor (GaN, ZnO, CdS) single nanowire lasers which were recently demonstrated experimentally. In particular, we compute the reflectivity for a few lowest-order guided modes (HE11, TE01, and TM01) from the nanowire facets. The reflectivity is shown to depend strongly on the mode type, lasing frequency and radius of the nanowire. By using the computed reflectivities, we make realisic estimates of the threshold gain and quality factor for the nanowire lasers. Our results shed light on the lasing mechanism of the nanowire lasers. (C) 2003 American Institute of Physics.