期刊
APPLIED PHYSICS LETTERS
卷 83, 期 6, 页码 1246-1248出版社
AMER INST PHYSICS
DOI: 10.1063/1.1600850
关键词
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Dye doping is a promising way to increase the spectral purity of polymer light-emitting diodes (LEDs). Here we analyze the frequency and field dependence of the complex admittance of Al-Ba-PPV-poly(3,4-ethylenedioxythiophene:polystyrene sulphonic acid)-indium tin oxide LEDs with and without dye. We compare the charge carrier mobilities of pristine and dye-doped double-carrier and hole-only (Au replacing Al-Ba) devices. Dye doping is shown to significantly influence the electron mobilities while the hole mobilities are left unchanged and thereby changing the carrier balance in a double carrier device towards that of a hole only device. The minimum in the LED capacitance as a function of voltage appears to be an excellent probe for the electron trapping phenomenon underlying the reduction of the mobility. (C) 2003 American Institute of Physics.
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