期刊
JOURNAL OF PHYSICS-CONDENSED MATTER
卷 15, 期 31, 页码 S2425-S2435出版社
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/15/31/317
关键词
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We propose an extension to the technique of fluctuation electron microscopy that quantitatively measures a medium-range order correlation length in amorphous materials. In both simulated images from computer-generated paracrystalline amorphous silicon models and experimental images of amorphous silicon, we find that the spatial autocorrelation function of dark-field transmission electron micrographs of amorphous materials exhibits a simple exponential decay. The decay length measures a nanometre-scale structural correlation length in the sample, although it also depends on the microscope resolution. We also propose a new interpretation of the fluctuation microscopy image variance in terms of fluctuations in local atomic pair distribution functions.
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