dc-electric-field-induced second-harmonic interferometry of the Si(111)-SiO2 interface in Cr-SiO2-Si MOS capacitor -: art. no. 073307

The Si(111)-SiO2 interface is probed by the interferometry of dc-electric-field-induced second-harmonic (EFISH) generation in planar Cr-SiO2-Si MOS structures. The phase shift between EFISH and dc-field-independent contributions to the second-harmonic field is extracted from the combination of intensity and phase bias dependences. This allows the complete separation of the complex EFISH contribution to the nonlinear response which is difficult to do by intensity measurements. The approach using EFISH generation as an internal homodyne for diagnostics of charge properties of MOS structure is proposed.