期刊
APPLIED PHYSICS LETTERS
卷 83, 期 8, 页码 1581-1583出版社
AMER INST PHYSICS
DOI: 10.1063/1.1605236
关键词
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We show that proper doping of the barrier regions can convert the well-known type-II InAs/AlSb quantum wells (QWs) to type I, producing strong interband transitions comparable to regular type-I QWs. The interband gain for TM mode is as high as 4000 1/cm, thus providing an important alternative material system in the midinfrared wavelength range. We also study the TE and TM gain as functions of doping level and intrinsic electron-hole density. (C) 2003 American Institute of Physics.
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