期刊
APPLIED PHYSICS LETTERS
卷 83, 期 8, 页码 1617-1619出版社
AMER INST PHYSICS
DOI: 10.1063/1.1601308
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Atomic resolution images of multiwalled boron nitride nanotubes have been obtained using scanning tunneling microscopy operating at tunneling currents below 20 pA and biases of approximately -2.5 V. Lattice images acquired with negative sample biases exhibit trigonal symmetry that is interpreted as resulting from nitrogen states. Tunneling spectroscopy confirms band gaps between 4.5 eV and 4.8 eV for tube diameters above 5 nm. Tunneling barrier height measurements made using standard current-distance analysis yields Phisimilar to6.3+/-0.7 eV for the boron nitride nanotubes. (C) 2003 American Institute of Physics.
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