期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 9, 期 5, 页码 1153-1165出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2003.819467
关键词
active photonic lattices; distributed-feedback lasers; grating surface-emitting semiconductor lasers; half-wave grating phaseshift; high-power coherent semiconductor lasers; photonic-crystal lasers
An analysis of second-order distributed feedback lasers (DFB) with central grating phaseshift is performed. The devices have an active grating (i.e., DFB) section, passive gratingsections (i.e., DBRs); and the active grating is formed at a metal-semiconductor interface. Coupled-mode theory and the transfer matrix method are employed. It is found that a central grating phaseshift, Deltaphi, of 180degrees causes the laser to radiate in a beam of symmetric near-field amplitude profile, in sharp contrast to conventional second-order DFB lasers which radiate in beams of asymmetric near-field amplitude profile. In turn the far-field profile becomes a single-lobe beam pattern. Thus, a means to fundamentally obtain surface emission in an orthonormal single-lobe beam from a second-order DFB/DBR device has been found. The orthornomal-beam emission is achieved at no penalty in device efficiency. External differential quantum efficiencies, eta(d), in excess of 70% can be obtained, and the guided-field intensity profile is substantially, uniform. The effects of the lengths of the DFB section (L-DFB) and of each of the DBR sections (L-DBR) on device performance are analyzed and optimal values are found to occur for L-DFB in the 500-700 mum range and for LDBR in the 600-700 mum range. One can obtain eta(D) values as high as 76% from devices with 80% of the energy in the central lobe, and moderate threshold gains (i.e., 40 cm(-1)). Threshold gains as low as 25 cm(-1) can also be obtained from highly efficient devices (i.e., eta(D) congruent to 70%), at some penalty in guided-field uniformity. In either case the intermodal discrimination is quite high (70-75 cm(-1)). Gratings with half-wave (i.e., pi) phaseshifts have been fabricated by using the dual-tone photoresist method, and the concept has been experimentally proven: orthornormal, single-lobe emission in a diffraction-limited beam from 1500 mum-long devices. Extension to two-dimensional (2-D) large-aperture: 200 mum x 1500 mum; surface emitters is quite possible, which should allow for the emission of watts of coherent CW power in a stable, single mode. The 2-D structure represents a defect-free, second-order active photonic lattice.
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