期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 9, 期 5, 页码 1308-1314出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2003.819494
关键词
InGaAs-GaAs; quantum dots (DQs); semiconductor lasers
Measurements on 1.3-mum quantum-dot lasers are presented that reveal a number of interesting effects. 1) At high bias, a second lasing line appears, corresponding to the excited state transition. 2) The linewidth enhancement factor increases dramatically above threshold. 3) The modulation performance is degraded when the second lasing line appears. A comprehensive numerical model is developed to explain this behavior. We attribute it to incomplete gain clamping above threshold. This is caused by a combination of the finite intraband relaxation time and the limited density of states.
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