期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
卷 42, 期 9B, 页码 5941-5946出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.42.5941
关键词
ferroelectric thin film; chemical solution deposition; leakage current density; domain pinning; FeRAM; MEMS; fatigue; degradation; polarization switching; upper electrodes of platinum(Pt),SrRuO3 (SRO) and IrO2
Ferroelectric thin films of Pb(Zr,Ti)O-3 (PZT) were prepared by chemical solution deposition (CSD). The top electrodes of platinum (Pt), SrRuO3 (SRO), and IrO2 thin films are deposited on the PZT thin films by RF magnetron sputtering (RF) and the pulsed laser deposition (PLD) methods, respectively. The polarization fatigue of ferroelectric thin-film capacitors is investigated. As a result, the remanent polarization value of the PZT thin films of SRO/PZT/PT/Pt/TiOx/SiO2/Si and IrO2/ PZT/PT/Pt/TiOx/SiO2/Si remains more than 10(11) switching cycles at constant value and the value of the PZT thin films of Pt/PZT/PT/Pt/TiOx/SiO2/Si decreases to approximately 50% of its initial value at 10(8) cycles. It is confirmed that polarization fatigue is improved using SRO and IrO2 thin-film electrodes as top electrodes.
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