期刊
IEEE TRANSACTIONS ON MAGNETICS
卷 39, 期 5, 页码 3190-3192出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2003.816053
关键词
cobalt; dc-dc power conversion; high current; low voltage; power inductors; thin-film devices; zirconium oxide
Thin-film V-groove inductors for microprocessor power delivery are discussed. A 10-MHz, 3.3-V to 1.1-V, 7-A dc-dc converter with V-groove inductors has been predicted to have an efficiency of 88% and power density of 60 W of output power per cm(2) of substrate area. The first prototype inductors with composite granular Co-ZrO2 thin-films were fabricated with dimensions smaller than those required for a 7-A converter in order to fabricate them on standard 25-mm silicon wafers. For these prototype devices, we predicted that a 10-MHz, 3.3-V,to 1.1-V, 2.1-A dc-dc converter would have 60% efficiency. Measurements on the prototypes indicate that a 2.1-A converter would have 55% efficiency with a power density of 28 W/cm(2). Measured losses were 23% higher than predicted. We have demonstrated that V-groove inductors can be fabricated with performance close to predicted results.
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