期刊
JOURNAL OF CRYSTAL GROWTH
卷 257, 期 1-2, 页码 89-96出版社
ELSEVIER
DOI: 10.1016/S0022-0248(03)01421-0
关键词
nanostructures; chemical beam epitaxy; semiconducting III-V materials
We have used low temperature photoluminescence and atomic force microscopy to study the growth, by chemical beam epitaxy, of self-assembled InAs/InP quantum dots. By modifying the procedure for capping the dots we have been able to control their emission energy by adjusting their height. This process relies on the As/P exchange process that occurs when an InAs surface is exposed to a phosphorus flux. This exchange is shown to occur for both continuous and discontinuous capping procedures. (C) 2003 Elsevier B.V. All rights reserved.
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