期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 50, 期 9, 页码 1914-1925出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2003.816524
关键词
Boltzmann transport equation; Buttiker probes; double gate; drift-diffusion; MOSFETs; nanoMOS; quantum transport; scattering
A program to numerically simulate quantum transport in double gate metal oxide semiconductor field effect transistors (MOSFETs) is described. The program uses a Green's-function approach and a simple treatment of scattering based on the idea of so-called Buttiker probes. The double gate device geometry permits an efficient mode space approach that dramatically lowers the computational burden and permits use as a design tool. Also implemented for comparison are a ballistic solution of the Boltzmann transport equation and the drift-diffusion approaches. The program is described and some examples of the use of nanoMOS for 10 nm double. gate MOSFETs are presented.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据