期刊
APPLIED PHYSICS LETTERS
卷 83, 期 9, 页码 1755-1757出版社
AMER INST PHYSICS
DOI: 10.1063/1.1605806
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A field-effect transistor has been constructed that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel. This device functions as an n-type accumulation-mode device. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect (FE) mobility is 0.1 cm(2)/V s and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2 K shows a thermal-activation-type behavior with an activation energy of 0.6 eV. (C) 2003 American Institute of Physics.
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