期刊
APPLIED PHYSICS LETTERS
卷 83, 期 10, 页码 2055-2057出版社
AMER INST PHYSICS
DOI: 10.1063/1.1608486
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A technique for the growth of InP nanowires, which does not rely on the vapor-liquid-solid growth mechanism, is demonstrated using selective-area chemical beam epitaxy. The nanowires are precisely positioned on an InP wafer and are always aligned along the available substrate <111>A directions. They have diameters as small as 40 nm, and typical lengths of 600 nm. They are found to be optically active, with thin embedded InAs layers showing quantum-dot-like behavior with well-defined excited states. (C) 2003 American Institute of Physics.
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