期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
卷 42, 期 9AB, 页码 L1039-L1040出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.42.L1039
关键词
a-plane GaN; non-polar; pn junction; MQWs; UV LED
We report a pn-junction ultraviolet light-emitting diode (LED) with peak emission at 363 nm using a-plane GaN-AlGaN multiple quantum wells over r-plane sapphire. The peak emission wavelength does not shift with increasing pump currents-therefore establishing the feasibility of high-efficiency non-polar light emitting devices.
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