期刊
JOURNAL OF APPLIED PHYSICS
卷 94, 期 6, 页码 3675-3696出版社
AMER INST PHYSICS
DOI: 10.1063/1.1600519
关键词
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We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date. The two main classes are: (1) conventional nitrides (wurtzite and zinc-blende GaN, InN, and AIN, along with their alloys) and (2) dilute nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III-V material, e.g., GaAsN and GaInAsN). As in our more general review of Ill-V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature and alloy-composition dependences are also recommended wherever they are available. The band anticrossing model is employed to parameterize the fundamental band gap and conduction band properties of the dilute nitride materials.
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