Organic thin-film transistors with ODPA-ODA polyimide as a gate insulator through vapor deposition polymerization

A new process for polymeric gate insulator in field-effect transistors was proposed. Fourier transform infrared absorption spectra were measured in order to identify ODPA-ODA polyimide. Its breakdown field and electrical conductivity were measured. Organic thin-film transistors with a stacked-inverted top-contact structure was fabricated to demonstrate that thermally evaporated polyimide films could be used as a gate insulator. As a result, the transistor performance with evaporated polyimide was similar with spin-coated polyimide. It seems that the mass-productive in-situ solution-free processes for organic thin-film transistors are possible by using the proposed method without breaking vacuum. (C) 2003 Elsevier B.V. All rights reserved.