期刊
INFRARED PHYSICS & TECHNOLOGY
卷 44, 期 5-6, 页码 503-508出版社
ELSEVIER
DOI: 10.1016/S1350-4495(03)00167-1
关键词
quantum dots; infrared photodetectors; polarization
The results of a detailed characterization study on a systematic set of InAs/GaAs self-assembled quantum dot infrared photodetectors are presented. A simple physical picture is also discussed to account for the main observed features. Photoresponse characteristics in a wide spectral region from the mid- to far-infrared are reported. Clear polarization behaviors with a dominant P-polarized response in the mid-infrared and a strong S-response in the far-infrared regions are shown. These behaviors can be qualitatively understood in view of the quantum dot shape of a large in-plane diameter and a small height in the growth direction. With a set of three samples, effects of the number of electrons per quantum dot on the spectra are investigated. (C) 2003 Elsevier B.V. All rights reserved.
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