期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 50, 期 10, 页码 2015-2020出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2003.816549
关键词
AlGaN/GaN HEMT; bias stress; current collapse; light illumination; series resistance; surface state
Drain current collapse in AlGaN/GaN HEMTs has been studied systematically by applying bias stress to the device. The collapse was suppressed by light illumination with energy smaller than the bandgap. The position dependence of the light illumination and the measurement of series source and drain resistances revealed that the collapse was caused by the surface states between the gate and drain electrodes, which captured electrons injected from the gate. The current collapse was eliminated by the passivation of the device surface with Si3N4 film.
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