期刊
JOURNAL OF PHYSICS-CONDENSED MATTER
卷 15, 期 38, 页码 S2619-S2629出版社
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/15/38/003
关键词
-
Deposition of 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) on sulfur passivated gallium arsenide S-GaAs(001) surfaces is investigated by scanning tunnelling microscopy and scanning tunnelling spectroscopy. The surface morphology and the film structure are studied for the multilayer growth of the organic molecules. Spectroscopic results for both clean substrate and ordered areas of PTCDA are shown in this work. We have measured I-V plots at different tip-sample distances, avoiding deformation of the organic layer. Under proper experimental conditions, a gap value of 2.2 eV has been measured on PTCDA crystals, in good agreement with the expected value for PTCDA (2.2-2.55 eV).
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据