期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
卷 42, 期 10A, 页码 L1109-L1111出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.42.L1109
关键词
single-electron turnstile; single-electron transistor; silicon-on-insulator; nanotechnology; current standard
A single-electron turnstile has been demonstrated using a silicon-based dual-gate single-electron transistor (SET). Each gate independently controls the closing and opening of the channel acting as the SET lead, which enables single-electron transfer synchronized with ac gate biases. By applying ac biases to the dual gates with a frequency f of similar to1 MHz and a phase shift of pi, current staircases quantized in units of ef are observed in drain current vs drain voltage characteristics at 25 K.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据