期刊
JOURNAL OF APPLIED PHYSICS
卷 94, 期 7, 页码 4409-4413出版社
AMER INST PHYSICS
DOI: 10.1063/1.1604458
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The electrical properties and the structure of isothermally annealed thin films of Ge2+xSb2Te5 (x=0 and 0.5) have been studied by in situ electrical measurements, x-ray diffraction, and transmission electron microscopy analyses. Phase separation has been observed in samples with an excess of Ge; by annealing amorphous Ge2.5Sb2Te5 films at temperatures in the range 130-160 degreesC, the material cannot be completely converted into the metastable face-centered-cubic (fcc) structure. At temperatures higher than 160 degreesC, the residual amorphous material may be converted into a fcc structure with a lower lattice parameter. (C) 2003 American Institute of Physics.
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