4.5 Article

InGaAs-AlAs-AlAsSb coupled quantum well intersubband transition all-optical switch with low switching energy for OTDM systems

期刊

IEEE PHOTONICS TECHNOLOGY LETTERS
卷 15, 期 10, 页码 1363-1365

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2003.818045

关键词

absorption saturation; coupled double quantum well (C-DQW); intersubband transition (ISB-T)

向作者/读者索取更多资源

We report a novel intersubband transition all-optical switch with low switching energy using InGaAs-AlAs-AlAsSb coupled double quantum wells (C-DQWs) with AlAs spacer layers. Very low saturation energy density of 34 fJ/mum(2) was observed for bulk transmittance with wavelength of 1.62 mum. Using a waveguide, whose core is 93 periods of the C-DQWs, an all optical switch with a low switching energy of 10 pJ for 10-dB extinction ratio was realized.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.5
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据